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BLW96 参数 Datasheet PDF下载

BLW96图片预览
型号: BLW96
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体射频双极晶体管放大器局域网
文件页数/大小: 1 页 / 19 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
BLW96
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLW96
is Designed for
High Linearity Class A, AB HF Power
Amplifier Applications up to 30 MHz.
PACKAGE STYLE .500 4L FLG
.112x45°
A
FULL R
L
FEATURES:
P
G
= 14 dB Typical at 200 W/28 MHz
IMD
3
= -32 dBc Typ. at 220 W
(PEP)
Omnigold™
Metalization System
C
B
E
C
Ø.125 NOM.
B
E
H
D
G
F
E
MAXIMUM RATINGS
I
C
V
EES
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
I J
K
12 A
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
110 V
55 V
4.0 V
320 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
0.7 C/W
O
O
O
O
A
B
C
D
E
F
G
H
I
J
K
L
.220 / 5.59
.125 / 3.18
.245 / 6.22
.720 / 18.28
.125 / 3.18
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10826
O
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
V
CE
C
C
G
P
IMD
3
η
C
I
C
= 50 mA
T
C
= 25 C
NONETEST
CONDITIONS
I
C
= 200 mA
I
E
= 20 mA
V
CE
= 55 V
V
CE
= 5.0 V
I
C
= 20 A
V
CB
= 50 V
I
C
= 7.0 A
I
C
= 4.0 A
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
110
55
4.0
10
15
50
1.9
280
13.5
-30
UNITS
V
V
V
mA
---
V
pF
dB
dBc
%
V
CE
= 50 V
I
CQ
=100 mA
P
OUT
= 200 W
(PEP)
40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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