BLW97
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLW97
is Designed for High
voltage applications up tp 30 MHz
PACKAGE STYLE .500 4L FLG
.112x45°
A
FULL R
L
FEATURES:
•
P
G
= 11.5 dB min. at 175 W/30 MHz
•
IMD
3
= -30 dBc max. at 175 W
(PEP)
•
Omnigold™
Metalization System
C
B
E
C
Ø.125 NOM.
B
D
G
F
E
E
H
MAXIMUM RATINGS
I
C
V
CESM
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
15 A
65 V
33 V
4.0 V
230 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.76 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
.980 / 24.89
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.245 / 6.22
.720 / 18.28
.125 / 3.18
MINIMUM
inches / mm
I J
K
MAXIMUM
inches / mm
.220 / 5.59
.125 / 3.18
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
V
CE(SAT)
C
C
G
P
IMD
3
η
C
I
C
= 50 mA
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
E
= 20 mA
V
CE
= 33 V
V
CE
= 5.0 V
I
C
= 25 A
V
CB
= 28 V
I
C
= 10 A
I
B
= 5.0 A
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
65
33
4.0
20
15
50
2.4
380
11.5
UNITS
V
V
V
mA
---
V
pF
dB
dBc
%
V
CE
= 28 V
I
CQ
= 100 mA
P
OUT
= 175 W
(PEP)
40
-30
IMPEDANCE DATA
FREQ.
470 MHz
Z
IN
(Ω)
1.5 – j2.7
Z
CL
(Ω)
5.7 + j1.5
P
IN
(W)
2.0
V
CE
(V)
12.5
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
