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BLX13C 参数 Datasheet PDF下载

BLX13C图片预览
型号: BLX13C
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 1 页 / 17 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
BLX13C
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLX13C
is Designed for
28 V, Linear Amplifier, class A and AB in
the HF and VHF bands.
PACKAGE STYLE .380" 4L STUD
.112x45°
A
FEATURES:
P
G
= 21 dB Typical at 25 W/ 28 MHz
Omnigoldl™
Metallization System
C
B
E
ØC
E
B
H
I
J
D
MAXIMUM RATINGS
I
C
V
CE
V
CB
P
DISS
T
J
T
STG
θ
JC
3.0 A
36 V
65 V
73 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.39 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
#8-32 UNC-2A
F
E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
ob
P
G
η
T
C
= 25 °C
TEST CONDITIONS
I
C
= 10 mA
I
C
= 50 mA
I
E
= 10 mA
V
CB
= 36 V
V
CE
= 5.0 V
V
CB
= 28 V
I
C
= 1.25A
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
65
36
4.0
4.0
10
50
21
100
UNITS
V
V
V
mA
---
pF
dB
V
CE
= 28 V
P
OUT
= 25 W
f = 28 MHz
45
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1