ASI BLX65S
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION
The
ASI BLX65S
is Designed for
12.5 V Class C Amplifier Applications
in the 100 to 500 MHz Frequency
Range.
PACKAGE STYLE TO-39
FEATURES INCLUDE:
•
Economical
TO-39
Package
•
8 dB Typical Gain
•
Emitter Ballasting
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
θ
JC
O
O
750 mA
36 V
5.0 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +200 C
35 C / W
O
O
O
O
1 = EMITTER 2 = BASE
3 = COLLECTOR (CASE)
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
OB
G
PE
η
C
I
C
= 50 mA
I
C
= 50 mA
I
E
= 1.0 mA
V
CB
= 15 V
V
CB
= 5.0 V
T
A
= 25 C
O
NONE
TEST CONDITIONS
MINIMUM
16
36
2.5
TYPICAL
MAXIMUM
UNITS
V
V
V
1.0
I
C
= 50 mA
f = 1.0 MHz
P
OUT
= 2.0 W
f = 470 MHz
7.0
55
20
15
200
mA
---
pF
dB
%
V
CB
= 12.5 V
V
CE
= 12.5 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
