BLX92A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLX92A
is Designed for
transmitting applications in class-A, B
or C with a supply voltage up to 28 V
PACKAGE STYLE .280 4L STUD
A
45°
C
FEATURES:
•
High Gain - 11.0 dB Min.
•
Omnigold™
Metallization System
B
E
B
D
C
E
J
E
F
I
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
0.7 A
65 V
6.0 W @ T
C
= 25 °C
-65 to +200 °C
-65 to +150 °C
9.8 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
.175 / 4.45
.275 / 6.99
.245 / 6.22
MINIMUM
inches / mm
G
H
K
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.640 / 16.26
.217 / 5.51
.285 / 7.24
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
h
FE
f
T
C
c
C
e
P
G
η
C
I
C
= 10 mA
I
C
= 10 mA
I
C
= 25 mA
I
E
= 1.0 mA
V
CE
= 5.0 V
V
CE
= 5.0 V
V
CB
= 10 V
V
EB
= 0 V
V
CE
= 28 V
T
C
= 25 °C
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
65
33
4.0
UNITS
V
V
V
V
---
I
C
= 100 mA
I
C
= 100 mA
f = 1.0 MHz
f = 1.0 MHz
P
OUT
= 2.5 W
f = 470 MHz
10
1.2
6.5
25
11
60
GHz
pF
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
