BLY90
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLY90
is Designed for
Class A,B and C, 12.5 V High Band
Applications up to 175 MHz.
PACKAGE STYLE .380 4L STUD
.112x45°
A
FEATURES:
•
Common Emitter
•
P
G
= 5.0 dB at 50 W/175 MHz
•
Omnigold™
Metalization System
B
C
E
ØC
E
B
H
I
J
D
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
8.0 A
36 V
18 V
4.0 V
130 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.35 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
#8-32 UNC-2A
F
E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
h
FE
C
c
f
T
G
P
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
E
= 25 mA
V
CE
= 5.0 V
V
CB
= 15 V
V
CE
= 10 V
V
CC
= 12.5 V
IC = 6.0 A
P
OUT
= 50 W
f = 175 MHz
I
C
= 1.0 A
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
36
18
4.0
10
130
550
5.0
75
200
160
UNITS
V
V
---
pF
MHz
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
