C1-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
C1-12
is Designed for 12.5 Volt
supply. Applications from 450 to 512
MHz.
PACKAGE STYLE .280 4L PILL
A
FEATURES:
•
P
G
= 11 dB Typ. at 1.1 W/470 MHz
• η
C
= 65 % Typ. at 1.1 W/470 MHz
•
Omnigold™
Metalization System
C
E
ØB
B
E
ØC
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
250 mA
36 V
28 V
4.0 V
5.0 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
35 °C/ W
DIM
A
B
C
D
E
F
.275 / 6.99
.004 / 0.10
.050 / 1.27
.118 / 3.00
MINIMUM
inches / mm
D
E
F
MAXIMUM
inches / mm
.220 / 5.59
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
ORDER CODE: ASI
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
EBO
h
FE
C
OB
P
G
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 5.0 mA
I
C
= 5.0 mA
I
E
= 5.0 mA
V
CE
= 6.0 V
V
CB
= 12 V
V
CE
= 12.5 V
Pin = 0.1 W
P
OUT
= 1.1 W
I
C
= 100 mA
f = 1.0 MHz
f = 470 MHz
MINIMUM TYPICAL MAXIMUM
14.5
37
4.0
10
3.0
11
65
100
UNITS
V
V
V
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. 0
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
