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C1-28 参数 Datasheet PDF下载

C1-28图片预览
型号: C1-28
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 2 页 / 28 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
 浏览型号C1-28的Datasheet PDF文件第2页  
C1-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
C1-28
is Designed for 28 Volt
Class C Amplifier Applications up to
500 MHz.
PACKAGE STYLE .280 4L PILL
A
FEATURES:
P
G
= 12 dB Typ. at 1.0 W/400 MHz
η
C
= 65 % Typ. at 1.0 W/400 MHz
Omnigold™
Metalization System
C
E
B
E
ØC
ØB
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
250 mA
40 V
28 V
3.5 V
7.0 W @ T
C
= 25
O
C
-65 C to +200 C
-65
O
C to +150
O
C
20
O
C/W
T
C
= 25
O
C
O
DIM
A
B
C
D
E
F
D
E
F
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.275 / 6.99
.004 / 0.10
.050 / 1.27
.118 / 3.00
.230 / 5.84
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
ORDER CODE: ASI10791
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
EBO
I
CBO
h
FE
C
OB
I
C
= 5.0 mA
I
C
= 5.0 mA
I
E
= 5.0 mA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
MHz
V
CE
= 28 V
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
50
50
4.0
500
UNITS
V
V
V
µ
A
---
pF
I
C
= 100 mA
f = 1.0
20
3.5`
120
5.0
P
G
η
C
P
OUT
= 1.0 W
f = 400 MHz
10
60
12
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/2