CBSL100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI CBSL100
is Designed for
Class AB, Cellular Base Station
Applications up to 960 MHz.
PACKAGE STYLE .400 BAL FLG (C)
.080x45°
A
B
FULL R
(4X).060 R
E
D
C
.1925
F
H
I
N
L
G
M
FEATURES:
•
Internal Input/Output Matching Network
•
P
G
= 9.0 dB at 100 W/ 960 MHz
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
25 A
60 V
30 V
3.0 V
310 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.6 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
.395 / 10.03
.850 / 21.59
1.335 / 33.91
.003 / 0.08
.060 / 1.52
.082 / 2.08
.120 / 3.05
.380 / 9.65
.780 / 19.81
.435 / 11.05
1.090 / 27.69
MIN IMUM
inches / m m
J
K
MAXIMUM
inches / m m
.220 / 5.59
.210 / 5.33
.230 / 5.84
.130 / 3.30
.390 / 9.91
.820 / 20.83
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.100 / 2.54
.205 / 5.21
.407 / 10.34
.870 / 22.10
ORDER CODE: ASI10585
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CES
h
FE
P
G
IMD
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
E
= 50 mA
V
CE
= 28 V
V
CE
= 5.0 V
V
CE
= 24 V
P
OUT
= 100 W
I
C
= 3.0 A
I
CQ
= 2 X 100 mA
f = 960 MHz
MINIMUM TYPICAL MAXIMUM
60
30
3.0
10
15
9.0
-32
45
70
UNITS
V
V
V
mA
---
dB
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
