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CBSL30B 参数 Datasheet PDF下载

CBSL30B图片预览
型号: CBSL30B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 1 页 / 21 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
CBSL30B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI CBSL30B
is Designed for
PACKAGE STYLE .250 BAL FLG
.020 x 45°
B
A
Ø.130 NOM.
.050 x 45°
E
D
C
N
FEATURES:
Omnigold™
Metalization System
F
H
I
J
G
MAXIMUM RATINGS
I
C
V
CBO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
L
K
M
5.0 A
48 V
45 V
4.0 V
43 W @ T
C
= 25
O
C
-65 C to +200 C
-65 C to +150 C
3.0
O
C/W
O
O
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MINIMUM
inches / mm
MAXIMUM
inches / mm
.060 / 1.52
.055 / 1.40
.125 / 3.18
.243 / 6.17
.630 / 16.00
.092 / 2.34
.555 / 14.10
.739 / 18.77
.315 / 8.00
.002 / 0.05
.055 / 1.40
.075 1.91
.565 / 14.35
.750 / 19.05
.327 / 8.31
.006 / 0.15
.065 / 1.65
.095 / 2.41
.190 / 4.83
.245 / 6.22
.257 / 6.53
.255 / 6.48
.670 / 17.01
.065 / 1.65
ORDER CODE: ASI10583
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
C
OB
P
G
I
C
= 50 mA
I
C
= 20 mA
I
E
= 5 mA
V
CB
= 24 V
T
C
= 25 C
O
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
48
25
3.5
50
30
4.0
---
---
---
1.0
100
25
7.5
UNITS
V
V
V
mA
---
pF
dB
V
CE
= 5.0 V
V
CB
= 24 V
V
CC
= 24 V
P
OUT
= 30 W
I
C
= 100 mA
f = 1.0 MHz
I
CQ
= 2 X 75 mA
f = 960 MHz
20
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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