CBSL30
DESCRIPTION:
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .230 6L FLG
A
.040x45°
4X .025 R
C
B
2XØ.130
.115
.430 D
E
.125
G
H
I
J K
L
F
The
ASI CBSL30
is Designed for
FEATURES:
•
•
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
7.5 A
48V
25 V
3.5 V
88 W @ T
C
= 25 C
-65 C to +200 C
-65
O
C to +150
O
C
3.0 C/W
O
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
MAXIMUM
inches / mm
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.970 / 24.64
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
O
O
O
ORDER CODE: ASI10582
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
h
FE
C
OB
P
G
IMD
3
VSWR
1
VSWR
2
OVD
T
C
= 25 C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 40 mA
I
C
= 40 mA
I
E
= 10 mA
V
CE
= 24 V
V
CE
= 20 V
V
CB
= 25 V
V
CE
= 25 V
P
OUT
= 30 W
I
CQ
= 150 mA
f
1
= 860.0 MHz
I
C
= 2.0 A
f = 1.0 MHz
f = 860 MHz
f
2
= 860.1 MHz
R
BE
= 150
Ω
MINIMUM TYPICAL MAXIMUM
48
30
25
3.5
10
15
55
40
28
5.0
---
40
---
---
---
---
---
100
50
7.5
-35
No Degradation in
Output Device
No Degradation in
Output Device
No Degradation in
Output Device
---
UNITS
V
V
V
mA
---
pF
dB
dBc
Typ.
Typ.
Typ.
V
CE
= 25 V
V
CE
= 25 V
±
20%
V
CE
= 25 V
±
20%
P
IN
= P
IN
(norm) +3 dB
V
CE
= 25 V
V
CE
= 25 V
±
20%
VSWR = 20:1
VSWR = 10:1
VSWR = 5:1
P
IN
(norm) = +5 Db
P
IN
(norm) = +3 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
