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FMB150 参数 Datasheet PDF下载

FMB150图片预览
型号: FMB150
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体射频双极晶体管放大器局域网
文件页数/大小: 2 页 / 32 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
 浏览型号FMB150的Datasheet PDF文件第2页  
FMB150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI FMB150
is a high power
transistor designed for FM broadcast
system in 88-108 MHz range. It has
diffused ballasting resistor to improve
MTBF and high VSWR capability.
PACKAGE STYLE .500 4L FLG
.112x45°
A
L
FEATURES:
Class C, CE mode 28 V Operation
P
G
= 9.0 dB at 150 W/108 MHz
Omnigold™
Metalization System
High VSWR capability
FULL R
E
C
Ø.125 NOM.
C
B
B
E
H
D
G
F
E
I J
K
MAXIMUM RATINGS
I
C
V
CBO
V
EBO
P
DISS
T
J
T
STG
θ
JC
16 A
55 V
4.0 V
165 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.06 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.125 / 3.18
.245 / 6.22
.720 / 18.28
.125 / 3.18
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10588
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
h
FE
C
OB
P
G
η
C
VSWR
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
E
= 20 mA
V
CE
= 5.0 V
V
CB
= 28 V
V
CC
= 28 V
P
OUT
= 150 W
I
C
= 1.0 A
f = 1.0 MHz
f = 108 MHz
MINIMUM TYPICAL MAXIMUM
55
25
4.0
20
140
9.0
10
65
3:1
UNITS
V
V
V
---
pF
dB
%
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. D
1/2