HF10-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI HF10-12F
is Designed for
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
FEATURES:
•
P
G
= 20 dB min. at 10 W/30 MHz
•
IMD
3
= -30 dBc max. at 10 W
(PEP)
•
Omnigold™
Metalization System
F
E
B
C
D
E
C
E
Ø.125 NOM.
FULL R
J
.125
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
G
H I
4.5 A
36 V
18 V
4.0 V
80 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
2.2
O
C/W
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10592
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
ob
G
PE
IMD
3
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 5 mA
V
CE
= 15 V
V
CE
= 5.0 V
T
C
= 25
O
C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
5
UNITS
V
V
V
V
mA
---
pF
I
C
= 1.0 A
f = 1.0 MHz
I
CQ
= 25 mA
f = 30 MHz
10
100
15
18
200
V
CB
= 12.5 V
V
CC
= 12.5 V
P
OUT
= 10 W
(PEP)
---
-30
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1