HF100-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI HF100-28
is a class A silicon NPN
planar transistor, designed for SSB
communications. Diffused ballasting provide
High VSRW Capability under rated operating
conditions.
PACKAGE STYLE .500 4L FLG
.112x45°
A
L
FEATURES:
•
P
G
= 15 dB min. at 100 W/30 MHz
•
High linear power output
•
IMD
3
= -30 dBc max. at 100 W
(PEP)
•
Omnigold™
Metalization System
•
28 V CE operation
E
FULL R
C
Ø.125 NOM.
C
B
B
D
G
F
E
E
H
I J
K
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
20 A
65 V
36 V
4.0 V
270 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.65 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.125 / 3.18
.245 / 6.22
.720 / 18.28
.125 / 3.18
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI10608
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
CBO
BV
EBO
I
CES
h
FE
C
ob
G
P
IMD
3
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 30 V
V
CE
= 5.0 V
V
CB
= 30 V
V
CE
= 28 V
P
IN
= 3.16 W
I
C
= 5.0 A
f = 1.0 MHz
P
PUT
= 100 W
f
2
= 30.001 MHz
MINIMUM TYPICAL MAXIMUM
35
65
65
4.0
15
10
---
15
16
-34
-30
200
285
UNITS
V
V
V
mA
---
pF
dB
dBc
f
1
= 30.000 MHz I
CQ
= 100 mA
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. D
1/2
ASI [ ADVANCED SEMICONDUCTOR ]
