HF150-50S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI HF150-50S
is Designed for
PACKAGE STYLE .500 4L STUD (A)
.112 x 45°
A
Ø .630 NOM
FEATURES:
•
P
G
= 14 dB min. at 150 W/30 MHz
•
IMD
3
= 100 dBc max. at 150 W
(PEP)
•
Omnigold™
Metalization System
B C
E
C
E
B
E
D
G
MAXIMUM RATINGS
I
C
V
CBO
V
EBO
V
CEO
P
DISS
T
J
T
STG
θ
JC
O
O
1/4-28 UNF-2A
F
H
10 A
110 V
4.0 V
55 V
233 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
0.75
O
C/W
O
O
O
DIM
A
B
C
D
E
F
G
H
.185 / 4.70
.497 / 12.62
.545 / 13.84
.495 / 12.57
.003 / 0.08
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.230 / 5.84
1.050 / 26.67
.555 / 14.10
.505 / 12.83
.007 / 0.18
.830 / 21.08
.198 / 5.03
.530 / 13.46
ORDER CODE: ASI10613
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CEO
I
CES
h
FE
C
ob
G
P
IMD
3
η
C
I
C
= 100 mA
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 30 V
V
E
= 60 V
V
CE
= 6 V
V
CB
= 50 V
T
C
= 25
O
C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
110
110
55
4.0
5
5
UNITS
V
V
V
V
mA
mA
---
pF
dB
dBc
%
I
C
= 1.4 A
f = 1.0 MHz
18
43.5
220
14
V
CE
= 50 V
I
CQ
=100 mA
P
OUT
= 150 W
(PEP)
37
-30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
