HF150-50F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI HF150-50S
is a 50 V epitaxial
transistor designed for SSB communications.
The device utilizes emitter ballastiong for
ruggedness.
PACKAGE STYLE .500 4L FLG
.112x45°
A
FULL R
L
FEATURES:
•
P
G
= 14 dB min. at 150 W/30 MHz
•
IMD
3
= 100 dBc max. at 150 W
(PEP)
•
Omnigold™
Metalization System
•
Common Emitter configuration
C
B
E
C
Ø.125 NOM.
B
D
G
F
E
E
H
I J
K
MAXIMUM RATINGS
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
10 A
110 V
55 V
4.0 V
233 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.75 °C/W
A
B
C
D
E
F
G
H
I
J
K
L
.220 / 5.59
.125 / 3.18
.245 / 6.22
.720 / 18.28
.125 / 3.18
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10612
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CEO
I
CES
h
FE
C
ob
G
P
IMD
3
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 30 V
V
CE
= 60 V
V
CE
= 6 V
V
CB
= 50 V
I
C
= 1.4 A
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
110
110
55
4.0
5
5
18
43.5
220
14
UNITS
V
V
V
V
mA
mA
---
pF
dB
dBc
%
REV. B
V
CE
= 50 V
I
CQ
=100 mA
f
1
= 30.000 MHz
P
OUT
= 150 W
(PEP)
f
2
= 30.001 MHz
-30
37
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
