HF20-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
HF20-12F
is Designed for 12.5 V
Class AB & C HF Power Amplifier
Applications in the 2 to 32 MHz Band.
FEATURES INCLUDE:
•
Replacement for
MRF433
&
SD1285
•
P
G
= 15 dB Min. at 30MHz & 20W
•
Emitter Ballasting for ruggedness
and reliability.
MAXIMUM RATINGS
I
C
V
CB
V
CE
V
EB
P
DISS
T
J
T
STG
θ
JC
O
O
PACKAGE STYLE .380" 4L FLANGE
4.5 A
36 V
18 V
4.0 V
80 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
2.2 C/W
O
O
O
O
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
OB
G
PE
IMD
3
η
C
T
C
= 25 C
O
TEST CONDITIONS
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 5.0 mA
V
CE
= 15 V
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
I
C
= 1.0 A
f = 1.0 MHz
I
CQ
= 25 mA
P
OUT
= 20 W
(
PEP
)
f = 30.000 & 30.001 MHz
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
5
10
100
15
55
-30
200
UNITS
V
V
V
V
mA
pF
dB
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
