HF5-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI HF5-12S
is Designed for
PACKAGE STYLE .380 4L STUD
.112x45°
A
FEATURES:
•
P
G
= 20 dB min. at 5 W/30 MHz
•
IMD
3
= -30 dBc max. at 5 W
(PEP)
•
Omnigold™
Metalization System
B
C
E
ØC
E
B
H I
J
D
MAXIMUM RATINGS
#8-32 UNC-2A
G
F
E
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
4.5 A
36 V
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
18 V
4.0 V
80 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
2.2
O
C/W
O
O
O
A
B
C
D
E
F
G
H
I
J
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10591
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
OB
G
P
IMD
3
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 5.0 mA
V
CE
= 15 V
V
CE
= 5.0 V
T
C
= 25
O
C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
5
UNITS
V
V
V
V
mA
---
pF
dB
dBc
I
C
= 1.0 A
f = 1.0 MHz
I
CQ
= 25 mA
f = 30 MHz
10
---
15
100
18
200
---
---
-30
V
CB
= 12.5 V
V
CC
= 12.5 V
P
OUT
= 5.0 W
(PEP)
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
