HF50-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI HF50-12S
is Designed for
PACKAGE STYLE .380 4L STUD
.112x45°
A
FEATURES:
B
•
P
G
= 16 dB min. at 50 W/30 MHz
•
IMD
3
= -30 dBc max. at 50 W
(PEP)
•
Omnigold™
Metalization System
D
C
E
ØC
E
B
H I
J
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
12.0 A
36 V
18 V
3.5 V
183 W @ T
C
= 25 C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.05
O
C/W
O
DIM
A
B
C
D
E
F
G
H
I
J
#8-32 UNC-2A
F
E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10597
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
OB
G
P
η
C
I
C
= 50 mA
I
C
= 100 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 15 V
V
CE
= 5.0 V
T
C
= 25
O
C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
36
18
3.5
10
UNITS
V
V
V
V
mA
---
pF
dB
I
C
= 5.0 A
f = 1.0 MHz
P
IN
= 7 W
f = 50 MHz
10
---
300
V
CB
= 12.5 V
V
CE
= 12.5 V
P
OUT
= 50 W
(PEP)
10
55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
