HF50-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
HF50-12
is Designed for 12.5 Volt
Class AB and Class C Power Amplifier
Applications Operating in the 2 to 32
MHz HF Band.
FEATURES INCLUDE:
•
High Gain, 16 dB Typical @ 30 MHz
•
Emitter Ballasting
•
Withstands Severe Mismatch
MAXIMUM RATINGS
I
C
V
CB
V
CE
V
EB
P
DISS
T
J
T
STG
θ
JC
10 A
36 V
18 V
4.0 V
175 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.0 C/W
O
PACKAGE STYLE .380" 4L FLANGE
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
ob
G
PE
η
IMD
T
C
= 25
O
C
TEST CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 15 V
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
I
CQ
= 50 mA
I
C
= 5.0 A
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
36
18
4.0
10
20
200
15
16
55
-30
UNITS
V
V
V
mA
---
pF
dB
%
dB
P
OUT
= 50 W
(
PEP
)
f = 30 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
