HXTR 4101
NPN SILICON RF TRANSISTOR
PACKAGE STYLE
DESCRIPTION:
The
HXTR4101
is a Common Base
Device Designed for Oscillator
Applications up to 10 GHz.
MAXIMUM RATINGS
I
C
V
EBO
V
CEO
T
J
T
STG
P
T
70 mA
1.5 V
20 V
300 °C
-65 °C to 250 °C
900 mW @ T
C
= 25 °C
DIMENSIONS IN MILLIMETERS
1 = COLLECTOR
2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS
SYMBOL
I
CEO
I
CBO
h
FE
Posc
V
CE
= 15 V
V
CB
= 15 V
V
CE
= 15 V
V
CB
= 15 V
T
C
= 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
500
100
UNITS
nA
nA
---
dBm
I
C
= 15 mA
I
C
= 30mA
I
C
= 30 mA
I
C
= 30 mA
I
C
= 30 mA
@ 1.0 KHz
f = 4.3 GHz
f = 3.0 GHz
f = 4.3 GHz
f = 6.0 GHz
f = 8.0 GHz
50
19
120
21.5
20.5
17
12
-50
220
N/C
PHASE NOISE TO CARRIER
FROM THE CARRIER(SSB)
dBc/Hz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
