LT1001A
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
B
ØA
45°
C
DESCRIPTION:
E
ØD
The
ASILT1001A
is a High
Frequency Transistor Designed for
High Gain Low Noise CATV, and
MATV Amplifier Applications.
F
G
H
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
θ
JC
200 mA
20 V
2.5 W @ T
C
= 50 C
-65 °C to +200 °C
-65 °C to +200 °C
70 °C/W
O
DIM
A
B
C
D
E
F
G
H
.016 / 0.407
.029 / 0.740
.028 / 0.720
.335 / 8.510
.305 / 7.750
.240 / 6.100
.500 / 12.700
.020 / 0.508
MINIMUM
inches / mm
MAXIMUM
inches / mm
.200 / 5.080
.045 / 1.140
.034 / 0.860
.370 / 9.370
.335 / 8.500
.260 / 6.600
1 = EMITTER
2 = BASE
3 = COLLECTOR(CASE)
NONE
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CBO
h
FE
V
CE(SAT)
f
t
C
cb
NF
G
Umax
T
A
= 25 °C
TEST CONDITIONS
I
C
= 5.0 mA
I
C
= 1.0 mA
I
E
= 100
µA
V
CB
= 10 V
V
CE
= 5.0 V
I
C
= 50 mA
V
CE
= 14 V
V
CB
= 10 V
V
CE
= 8.0 V
V
CE
= 14 V
I
C
= 50 mA
I
C
= 90 mA
I
C
= 50 mA
I
B
= 5.0 mA
I
C
= 90 mA
f = 300 MHz
f = 1.0 MHz
f = 300 MHz
f = 300 MHz
MINIMUM
20
40
3.5
TYPICAL
MAXIMUM
UNITS
V
V
V
50
70
500
3.0
1.6
2.5
15
300
µ
A
---
mV
GHz
pF
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
