MA40160
SCHOTTKY MIXER DIODE
DESCRIPTION:
The
ASI MA40160
s a Silicon
medium barrier Schottky Diode
Designed for normal L.O. drive, Mixer
Applications up to 26 GHz.
PACKAGE STYLE 19
FEATURES:
•
Ceramic Package
MAXIMUM RATINGS
I
F
V
R
P
DISS
T
J
T
STG
2.0 mA
3.0 V
75 mW @ T
C
= 25 °C
-65 °C to +150 °C
-65 °C to +150 ° C
CHARACTERISTICS
SYMBOL
V
F
V
BR
C
J0
NF
Z
IF
SRW
I
F
= 2.0 mA
I
R
= 3.0
µA
V
R
= 0 V
F = 16 Ghz
T
C
= 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
200
3.0
f = 1 MHz
0.06
0.10
6.5
450
0.2
500
UNITS
mV
V
pF
dB
Ohms
---
P
LO
= 10 dBm
R
L
= 22
Ω
F
IF
= 30 KHz
R
L
= 22
Ω
250
N
IF
= 1.5 dB
Peak power = 1 mW
A D V A N C E D S E M I C O N D U C T O R, I N C
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/2
ASI [ ADVANCED SEMICONDUCTOR ]
