MLN1033S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MLN1033S
is Designed for
PACKAGE STYLE .280 4L STUD
A
45°
D
B
FEATURES:
•
•
•
Omnigold™
Metalization System
S
G
D
C
S
J
E
F
I
MAXIMUM RATINGS
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
θ
JC
O
O
G
H
K
DIM
A
B
C
D
E
MINIMUM
inches / mm
#8-32 UNC
MAXIMUM
inches / mm
10 A
60 V
35 V
140 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
17 C/W
O
O
O
O
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
.245 / 6.22
.640 / 16.26
.175 / 4.45
.275 / 6.99
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
F
G
H
I
J
K
.255 / 6.48
.217 / 5.51
.285 / 7.24
ORDER CODE: ASI10627
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
EBO
I
CES
h
FE
C
ob
P
G
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
E
= 28 V
T
C
= 25 C
O
NONETEST
CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5
UNITS
V
V
V
mA
---
pF
dB
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 18 V
P
OUT
= 2.0 W
I
C
= 1.0 A
f = 1.0 MHz
I
CQ
= 220 mA
f = 1.0 GHz
10
100
5.5
9.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
