NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
MRA0610-18A
is Designed for
Class C, Common Base Wideband
Large Signal Amplifier Applications
From 600 MHz to 1.0 GHz, With
Internal Compensating Matching
Network and Diffused Ballast
Resistors.
PACKAGE STYLE MRA .25
DIM
A
B
C
D
E
F
G
H
J
K
L
MIN
MAX
8.00
8.38
0.08
0.15
1.98
2.34
1.40
1.65
4.32
5.08
18.77
19.03
5.33
5.84
6.17
6.43
7.74
8.64
14.10
14.35
3.17
3.43
INCHES
MIN
O.351
0.003
0.078
0.055
0.170
0.739
0.210
0.243
0.210
0.555
0.125
MAX
0.330
0.006
0.092
0.065
0.200
0.749
0.230
0.253
0.240
0.565
0.135
MAXIMUM RATINGS
I
C
V
CES
T
J
T
STG
θ
JC
O
O
2.5 A
(CONT)
50 V
-65 C to +200 C
-65 C to +150 C
4.0 C/W
O
O
O
1 = Collector 2 = Emitter
3 = Base
CHARACTERISTICS
SYMBOL
BV
CES
BV
EBO
I
CBO
h
FE
C
ob
G
PB
η
c
T
C
= 25 C
O
NONE
TEST CONDITIONS
I
C
= 100 mA
I
E
= 1.25 mA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
P
out
= 18 W
I
C
= 500 mA
f = 1.0 MHz
f = 600 MHz & 1.0 GHz
MINIMUM TYPICAL MAXIMUM UNITS
50
3.5
2.5
10
14
7.8
50
100
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
