MRA1014-35
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MRA1014-35
is Designed
for Class C, Common Base Wideband
Large Signal Amplifier Applications
From 1.0 GHz to 1.4 GHz.
PACKAGE STYLE .320 SQ 2L FLG
C
B
FEATURES:
•
Diffused Ballast Resistors.
•
Internal Matching Network
•
Omnigold™
Metalization System
E
MAXIMUM RATINGS
I
C
V
CES
V
EBO
T
J
T
STG
θ
JC
5.0 A
(CONT)
50 V
3.5 V
-65 °C to +200 °C
-65 °C to +150 °C
2.5 °C/W
CHARACTERISTICS
SYMBOL
BV
CES
BV
EBO
I
CBO
h
FE
C
ob
G
PB
η
c
T
C
= 25 °C
NONE
TEST CONDITIONS
I
C
= 200 mA
I
E
= 2.5 mA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
P
out
= 35 W
I
C
= 1.0 A
f = 1.0 MHz
f = 1.0 GHz & 1.4 GHz
MINIMUM TYPICAL MAXIMUM UNITS
50
3.5
5.0
10
100
24
7.0
50
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
