MRF1004MA
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MRF1004MA
is Designed
for Class B and C, TACAN, IFF, and
DME Applications up to 1090 MHz.
PACKAGE STYLE .280 4L STUD
FEATURES:
•
Class B and C Operation
•
Common Base
•
P
G
= 10 dB at 4.0 W/1090 MHz
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
θ
JC
O
O
250 mA
20 V
7.0 W @ T
C
= 25°C
-65 C to +200 °C
-65 C to +150 °C
25.0 C/W
O
1 = Collector
2 = Emitter
3 & 4 = Base
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
P
G
η
C
T
C
= 25 C
O
NONETEST
CONDITIONS
I
C
= 5.0 mA
I
C
= 5.0 mA
I
E
= 1.0 mA
V
CB
= 35 V
V
CE
= 5.0 V
V
CC
= 35 V
I
C
= 75 mA
P
OUT
= 4.0 W
f = 1090 MHz
MINIMUM TYPICAL MAXIMUM
50
20
3.5
0.5
10
10
40
11
45
100
UNITS
V
V
V
mA
---
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
