MRF1001A
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
DESCRIPTION:
The
ASI MRF1001A
is a High
Frequency Transistor Designed for
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
θ
JC
200 mA
20 V
1.0 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
175 °C/W
1 = Emitter
2 = Base
3 = Collector
NONE
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
t
G
Umax
MAG
|S
21
|
2
T
C
= 25 °C
TEST CONDITIONS
I
C
= 5.0 mA
I
C
= 1.0 mA
I
C
= 100
µA
V
CB
= 10 V
V
EB
= 3.5 V
V
CE
= 5.0 V
I
C
= 50 mA
V
CE
= 14 V
V
CC
= 14 V
f = 300 MHz
I
C
= 50 mA
I
B
= 10 mA
I
C
= 90 mA
I
C
= 90 mA
f = 300 MHz
P
out
= 1.0 W
MINIMUM
20
30
3.5
TYPICAL
MAXIMUM
UNITS
V
V
V
50
100
50
100
3.0
11.5
11.7
10
11.13
300
µA
µA
---
V
GHz
dB
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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