MRF1000MB
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MRF1000MB
is Designed for
Class A, DME/TACAN Applications up to
1090 MHz.
PACKAGE STYLE .280 4L PILL
A
FEATURES:
•
Class A Operation
•
P
G
= 10 dB at 0.2 W/1090 MHz
•
Omnigold™
Metalization System
ØB
E
C
B
E
ØC
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
θ
JC
O
O
D
E
F
200 mA
20 V
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
7.0 W
-65 C to +200 C
-65 C to +150 C
25.0 C/W
O
O
O
A
B
C
D
E
F
.220 / 5.59
.230 / 5.84
1.055 / 26.80
.275 / 6.99
.004 / 0.10
.050 / 1.27
.118 / 3.00
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CES
h
FE
P
G
T
C
= 25 C
O
NONETEST
CONDITIONS
I
C
= 1.0 mA
I
C
= 5.0 mA
I
E
= 1.0 mA
V
CE
= 28 V
V
CE
= 5.0 V
V
CC
= 18 V
I
C
= 100 mA
P
OUT
= 0.2 W
f = 1090 MHz
MINIMUM TYPICAL MAXIMUM
50
20
3.5
1.0
15
10
120
UNITS
V
V
V
mA
---
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
