MRF136
RF POWER FIELD-EFFECT TRANSISTOR
DESCRIPTION:
The
ASI MRF136
is a N-Channel
Enhancement MOSFET, Designed for
Wideband Large Signal Amplifier
Applications up to 400 MHz.
PACKAGE STYLE .380 4L FLG
MAXIMUM RATINGS
I
D
V
DSS
P
DISS
T
J
T
STG
θ
JC
2.5 A
65 V
50 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
3.6 °C/W
1 = DRAIN
2 = GATE
3 & 4 = SOURCE
CHARACTERISTICS
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
NF
G
ps
η
T
C
= 25 °C
TEST CONDITIONS
I
D
= 5.0 mA
V
DS
= 28 V
V
DS
= 0 V
I
D
= 25 mA
I
D
= 250 mA
V
DS
= 28 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 40 V
V
DS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
65
2.0
1.0
1.0
250
3.0
400
24
25
5.5
1.0
12
50
16
60
6.0
UNITS
V
mA
µ
A
V
mmhos
pF
V
DS
= 28 V
V
DD
= 28 V
I
DQ
= 25 mA
V
DD
= 28 V
I
DQ
= 25 mA
I
D
= 0.5 A
P
out
= 15 W
f = 150 MHz
f = 150 MHz
dB
dB
%
ψ
P
out
= 15 W
f = 150 MHz
VSWR 30:1 @
ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
