MRF151G
RF FIELD-EFFECT POWER TRANSISTOR
DESCRIPTION:
The
ASI MRF151G
is a Dual
Common Source N-Channel
Enhancement-Mode MOSFET
RF Power Transistor, Designed for
175 MHz, 300 W Transmitter and
Amplifier Applications.
PACKAGE STYLE .385X.850 4LFG
MAXIMUM RATINGS
I
D
V
DSS
V
GS
P
DISS
T
J
T
STG
θ
JC
O
O
40 A
125 V
±40
V
500 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
0.35 C/W
O
O
O
O
1 & 2 = DRAIN
3 & 4 = GATE
5 = SOURCE
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(th)
V
DS(on)
g
fs
C
iss
C
oss
C
rss
G
ps
η
ψ
V
DS
= 50 V
V
DS
= 0 V
T
C
= 25 C
O
TEST CONDITIONS
I
D
= 100 mA
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
I
DQ
= 500 mA
f = 1.0 MHz
P
out
= 300 W
MINIMUM
125
TYPICAL
MAXIMUM
5.0
1.0
UNITS
V
mA
µ
A
V
V
mhos
I
D
= 100 mA
I
D
= 10 A
I
D
= 5.0 A
V
DS
= 50 V
V
DD
= 50 V
f = 175 MHz
1.0
5.0
350
250
15
14
50
16
55
5.0
5
pF
dB
%
V
SWR
= 5:1
AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
