SILICON N-CHANNEL RF POWER MOSFET
DESCRIPTION:
The
MRF161
is an Enhancement-
Mode N-Channel MOS Broadband RF
Power Transistor for Wideband Large
Signal Amplifier and Oscillator
Applications from 2.0 to 400 MHz.
PACKAGE STYLE .500 4L FLG
.112x45°
A
FULL R
L
S
D
Ø.125 NOM.
C
B
G
D
G
F
S
E
MAXIMUM RATINGS
I
D
V
DSS
V
GS
P
DISS
T
J
T
STG
θ
JC
O
O
H
I J
K
900 mA
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
65 V
±40
V
17.5 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
10 C/W
O
O
O
O
A
B
C
D
E
F
G
H
I
J
K
L
.220 / 5.59
.125 / 3.18
.245 / 6.22
.720 / 18.28
.125 / 3.18
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
.980 / 24.89
1.050 / 26.67
CHARACTERISTICS
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
NF
G
ps
η
ψ
T
C
= 25 C
O
NONE
TEST CONDITIONS
I
D
= 5.0 mA
V
DSS
= 28 V
V
GS
= 40 V
V
DS
= 10 V
V
DS
= 10 V
V
DS
= 28 V
V
GS
= 0 V
V
GS
= 0 V
V
DS
= 0 V
I
D
= 10 mA
I
D
= 100 mA
V
GS
= 0 V
f = 1.0 MHz
MINIMUM
65
TYPICAL
MAXIMUM
1.0
1.0
UNITS
V
mA
µ
A
V
mmhos
1.0
80
7.0
9.7
2.3
3.0
11.0
45
13.5
50
6.0
pF
dB
dB
%
V
DS
= 28 V
I
D
= 100 mA
f = 400 MHz
Z
S
= 67.7+j = 14.1
Z
L
= 14.5+j = 25.7
V
DD
= 28 V
I
DQ
= 50 mA
P
out
= 5.0 W
I
DQ
= 50 mA
P
out
= 5.0 W
V
DD
= 28 V
V
SWR
= 30:1
AT ALL PHASE ANGLES
NO DEGRADRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
