MRF237
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION:
The
MRF237
is
designed for large signal power
amplifier applications operating to
225 MHz
PACKAGE STYLE TO-39
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
P
DISS
T
J
T
STG
θ
JC
1.0 A
36 V
18 V
8.0 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
22 °C/W
1 = EMITTER
2 = BASE
3 = COLLECTOR
TRANS1.SYM
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
OB
G
PE
η
I
C
= 10 mA
T
C
= 25 °C
TEST CONDITIONS
I
C
= 5.0 mA
I
C
= 1.0 mA
V
CE
= 15 V
V
CE
= 5.0 V
V
CB
= 15 V
V
CC
= 12.5 V
P
OUT
= 4.0 W
I
C
= 250 mA
f = 1.0 MHz
f = 175 MHz
MINIMUM
18
36
4.0
TYPICAL
MAXIMUM
UNITS
V
V
V
.25
5.0
15
12
50
14
62
20
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
