MRF313
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The
MRF313
is Designed for wide
band Amplifier Applications up to 400
MHz.
PACKAGE STYLE .200" 4L PILL
FEATURES:
•
P
G
= 15 dB min. at 1.0 W/ 400 MHz
•
Common Emitter for Improved
Stability
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
150 mA
40 V
30 V
3.0 V
6.1 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
28.5 C/W
O
O
O
O
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CEO
h
FE
C
OB
P
G
η
C
I
C
= 10 mA
T
C
= 25 C
O
NONETEST
CONDITIONS
I
C
= 0.1 mA
I
E
= 1.0 mA
V
E
= 20 V
V
CE
= 10 V
V
CB
= 28 V
I
C
= 100 mA
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
30
35
3.0
1.0
20
3.5
15
16
45
150
5.0
UNITS
V
V
V
mA
---
pF
dB
%
V
CC
= 28 V
P
OUT
= 1.0 W
f = 400 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
