MRF421
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MRF421
is Designed for
High linear amplifier applications from
2.0 to 30 MHZ.
PACKAGE STYLE .500 4L FLG
.112x45°
A
FULL R
Ø.125 NOM.
L
FEATURES:
•
P
G
= 12 dB min. at 100 W/30 MHz
•
IMD
3
= -30 dBc max. at 100 W
(PEP)
•
Omnigold™
Metalization System
C
B
E
D
G
F
K
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
20 A
DIM
H
I J
MINIMUM
inches / mm
MAXIMUM
inches / mm
45 V
20 V
3.0 V
290 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.6 °C/W
A
B
C
D
E
F
G
H
I
J
K
L
.220 / 5.59
.125 / 3.18
.245 / 6.22
.720 / 18.28
.125 / 3.18
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI10824
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
CBO
BV
EBO
I
CES
h
FE
C
OB
G
P
IMD
3
η
C
I
C
= 50 mA
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 16 V
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CE
= 12.5 V
V
CE
= 12.5 V
I
CQ
= 150 mA
I
CQ
= 150 mA
I
C
= 5.0 A
f = 1.0 MHz
f = 30 MHz
P
OUT
= 100 W
MINIMUM TYPICAL MAXIMUM
20
45
45
4.0
10
10
650
10
40
12
-30
200
UNITS
V
V
V
V
mA
---
pF
dB
dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
