MRF466
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MRF466
is Designed for
power amplifier applications from 2.0
to 30MHz.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
E
FEATURES:
•
P
G
= 15 dB min. at 40 W/30 MHz
•
IMD
3
= -30 dBc max. at 40 W
(PEP)
•
Omnigold™
Metalization System
B
C
D
F
E
C
E
Ø.125 NOM.
FULL R
J
.125
G
H I
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
P
DISS
T
J
T
STG
θ
JC
6.0 A
65 V
35 V
175 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.0 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE
C
ob
G
PE
η
IMD
3
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 100 mA
I
E
= 1.0 mA
V
E
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
P
OUT
= 40 W (PEP)
I
CQ
= 20 mA
I
C
= 0.5 A
f = 1.0 MHz
f = 30 MHz
MINIMUM TYPICAL MAXIMUM
35
65
4.0
5
10
125
15
40
-40
-30
19
80
200
UNITS
V
V
V
mA
---
pF
dB
%
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
