MRF5175
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MRF5175
is Designed for
High Power Class C Amplifier in, 225
to 400 MHz Military Communication
Equipment.
PACKAGE STYLE .280 4L STUD
A
45°
C
FEATURES:
•
Class C Operation
•
P
G
= 11 dB at 5.0 W/400 MHz
•
Omnigold™
Metalization System
B
E
B
D
C
E
J
E
F
I
MAXIMUM RATINGS
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
θ
JC
1.0 A
DIM
MINIMUM
inches / mm
G
H
K
#8-32 UNC
MAXIMUM
inches / mm
60 V
33 V
12 W @ T
C
= 25 C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
12 C/W
O
O
A
B
C
D
E
F
G
H
I
J
K
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
.245 / 6.22
.640 / 16.26
.175 / 4.45
.275 / 6.99
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.217 / 5.51
.285 / 7.24
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
ob
P
G
η
D
I
C
= 30 mA
I
C
= 30 mA
I
E
= 1.0 mA
V
CB
= 30 V
T
C
= 25 C
O
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
33
60
4.0
0.5
UNITS
V
V
V
mA
---
pF
dB
%
V
CE
= 5.0 V
V
CB
= 30 V
V
CC
= 28 V
I
C
= 250 mA
f = 1.0 MHz
P
OUT
= 5.0 W
f = 400 MHz
10
100
15
11
50
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
