MRF5174
NPN RF POWER TRANSISTOR
DESCRIPTION:
The
MRF5174
is a Common Emitter
Device Designed for Class A, AB and
C Amplifier Applications in the 225 to
400 MHz Band.
PACKAGE STYLE .280 4L STUD
A
45°
C
E
B
FEATURES INCLUDE:
•
High Gain
•
Gold Metallization
•
Emitter Ballasting
B
E
D
C
J
E
F
I
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
θ
JC
O
O
G
H
K
DIM
A
B
C
D
E
F
G
H
I
J
K
.175 / 4.45
.275 / 6.99
.245 / 6.22
.640 / 16.26
.217 / 5.51
.285 / 7.24
MINIMUM
inches / mm
#8-32 UNC
MAXIMUM
inches / mm
0.5 A
40 V
8.75 W @ T
C
= 25 C
-55 C to +200 C
-55 C to +200 C
20 C/W
O
O
O
O
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
C
OB
P
G
η
C
T
C
= 25 C
O
TEST CONDITIONS
I
C
= 1.0 mA
I
C
= 1.0 mA
I
E
= 1.0 mA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
P
OUT
= 2.0 W
I
C
= 100 mA
f = 1.0 MHz
f = 400 MHz
MINIMUM TYPICAL MAXIMUM
40
28
3.5
500
20
120
5.0
12
50
13
UNITS
V
V
V
µ
A
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
