MRF555
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The
ASI MRF555
is designed for
Wideband large signal stages in the
UHF frequency range.
PACKAGE STYLE
FEATURES:
•
12.5 V, 470 MHz.
•
P
OUT
= 1.5 W
•
G
P
= 11 min.
• η
= 60 % (Typ)
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
MIN
MAX
4.45
5.21
1.91
2.54
0.84
0.99
2.46
2.64
8.84
9.73
0.20
0.31
7.24
8.13
1.65
3.25
0.64
1.02
INCHES
MIN
MAX
.175
.205
.075
.100
.033
.039
.097
.104
.348
.383
.008
0.12
.285
.320
0.65
0.128
.025
0.40
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
θ
JC
500 mA
30 V
3.0 W @ T
C
= 75 °C
-65 °C to +200 °C
-65 °C to +150 °C
41.7 °C/W
1 = COLLECTOR
2 = EMITTER
3 = BASE
4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE
C
CB
G
PE
η
ψ
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 5.0 mA
I
C
= 5.0 mA
I
E
= 0.1 mA
V
CE
= 15 V
V
CE
= 5.0 V
V
CB
= 10 V
V
CE
= 12.5 V
P
OUT
= 1.5 W
I
C
= 100 mA
f = 1.0 MHz
f = 470 MHz
MINIMUM TYPICAL MAXIMUM
16
30
3.0
5.0
50
200
5.5
11
50
10:1
12.5
60
UNITS
V
V
V
mA
---
pF
dB
%
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/3
ASI [ ADVANCED SEMICONDUCTOR ]
