MRF553
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The
ASI MRF553
is designed for
Low power amplifier applications.
PACKAGE STYLE
MILLIMETERS
MIN
MAX
4.45
5.21
1.91
2.54
0.84
0.99
2.46
2.64
8.84
9.73
0.20
0.31
7.24
8.13
1.65
3.25
0.64
1.02
INCHES
MIN
MAX
.175
.205
.075
.100
.033
.039
.097
.104
.348
.383
.008
0.12
.285
.320
0.65
0.128
.025
0.40
FEATURES:
•
12.5 V, 175 MHz.
•
P
OUT
= 1.5 W
•
G
P
= 11.5 min.
• η
= 60 % (Typ)
DIM
A
B
C
D
E
F
G
H
J
K
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
500 mA
36 V
3.0 W @ T
C
= 75 °C
-65 °C to +200 °C
-65 °C to +150 °C
41.7 °C/W
1 = COLLECTOR
2 = EMITTER
3 = BASE
4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
CES
BV
EBO
I
CES
h
FE
C
CB
G
PE
η
ψ
I
C
= 10 mA
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 5.0 mA
I
C
= 5.0 mA
I
E
= 1.0 mA
V
CE
= 15 V
V
CE
= 5.0 V
V
CB
= 10 V
V
CE
= 12 V
P
OUT
= 1.5 W
I
C
= 250 mA
f = 1.0 MHz
f = 175 MHz
MINIMUM TYPICAL MAXIMUM
16
36
36
4.0
5.0
30
12
11.5
50
10:1
13
60
200
20
UNITS
V
V
V
V
mA
---
pF
dB
%
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
