MRF587
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MRF587
is Designed for
High Linearity Power Amplifier
Applications up to 500 MHz.
PACKAGE STYLE .280 4L STUD
A
45°
1
B
2
4
3
FEATURES:
•
P
G
= 16 dB Typical at 220 W/500 MHz
•
Low Noise Figure
•
Diffused Ballast Resistors
•
Omnigold™
Metalization System
DIM
D
E
F
G
C
J
I
H
K
MINIMUM
inches / mm
#8-32 UNC
MAXIMUM
inches / mm
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
200 mA
34 V
17 V
2.5 V
5.0 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
A
B
C
D
E
F
G
H
I
J
K
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
.245 / 6.22
.640 / 16.26
.175 / 4.45
.275 / 6.99
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
.217 / 5.51
.285 / 7.24
Lead 1 = Collector
2 & 3 = Emitter
4 = Base
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
C
cb
G
P
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 1.0 mA
I
C
= 5.0 mA
I
E
= 100 µA
V
CB
= 10 V
V
CE
= 5.0 V
V
CB
= 10 V
I
C
= 50 mA
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
34
17
2.5
50
50
1.7
11
200
2.2
UNITS
V
V
V
µA
---
pF
dB
%
V
CC
= 15 V
I
C
= 90 mA
f = 0.3 GHz
65
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
