MRF5812
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The
ASI MRF5812
is Designed for
high current, low power, low noise,
amplifiers up to 1.0 GHz.
PACKAGE STYLE SO-8
FEATURES:
•
Low Noise – 2.5 dB @ 500 MHz
•
Ftau – 5.0 GHz @ 10 V, 75 mA
•
Cost Effective SO-8 package
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
200 mA
30 V
15 V
2.5 V
1.25 W @ T
C
= 25 °C
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
C
OB
F
TAU
NF
min
G
NF
G
U max
MSG
2
|S
21
|
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 1.0 mA
I
C
= 5.0 mA
I
E
= 0.1 mA
V
CB
= 15 V
V
CE
= 2.0 V
V
CE
= 5.0 V
V
CB
= 10 V
V
CE
= 10 V
I
C
= 75 mA
I
C
= 50 mA
f = 1.0 MHz
f = 1.0 GHz
MINIMUM TYPICAL MAXIMUM
30
15
2.5
0.1
0.1
50
1.4
5.0
2.0
13
3.0
200
2.0
UNITS
V
V
V
mA
mA
---
pF
GHz
dB
%
dB
dB
dB
V
CE
= 10 V
I
C
= 50 mA
f = 500 MHz
15.5
17.8
20
15
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
