MRF616
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
MRF616
is Designed for
Common Emitter Class C Amplifier
Applications in 12.5 Volt UHF Mobile
Radios.
PACKAGE STYLE .280" 4L PILL
A
E
C
E
B
FEATURES INCLUDE:
•
High Gain,
11 DB Typical
•
Gold Metallization
•
Emitter Ballasting
ØB
ØC
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
θ
JC
O
O
D
E
F
250 mA
36 V
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
5.0 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +200 C
35 C/W
O
O
O
O
A
B
C
D
E
F
.220 / 5.59
.230 / 5.84
1.055 / 26.80
.275 / 6.99
.004 / 0.10
.050 / 1.27
.118 / 3.00
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
h
FE
C
OB
P
G
η
C
I
C
= 5.0 mA
I
C
= 50 mA
I
E
= 1.0 mA
V
CE
= 5.0 V
T
C
= 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
16
4.0
UNITS
V
V
V
---
I
C
= 150 mA
f = 1.0 MHz
P
OUT
= 1.0 W
f = 470 MHz
20
3.5
10
11
65
V
CB
= 12.5 V
V
CE
= 12.5 V
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
