MRF839F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
MRF839F
is Designed for
Class AB, Common Emitter
Applicatons Up to 960 MHz.
.430 D
PACKAGE STYLE .230 6L FLG
A
.040x45°
4X .025 R
.115
C
B
2XØ.130
FEATURES INCLUDE:
•
Input Matching Network
•
High Gain
•
Gold Metalization
DIM
E
.125
G
H
I
J K
L
F
MINIMUM
inches / mm
MAXIMUM
inches / mm
MAXIMUM RATINGS
I
C
V
CES
P
DISS
T
J
T
STG
θ
JC
0.6 A
36 V
20 W @ T
C
= 25 C
-55 C to +200 C
-55 C to +150 C
9.0 C/W
O
O
O
O
O
O
A
B
C
D
E
F
G
H
I
J
K
L
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.970 / 24.64
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
1 & 3 & 4 & 6 = EMITTER
2 = BASE
5 = COLLECTOR
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
OB
P
G
η
C
T
C
= 25 C
O
TEST CONDITIONS
I
C
= 5.0 mA
I
C
= 5.0 mA
I
E
= 100
µA
V
CE
= 15 V
V
CE
= 5.0 V
V
CB
= 15 V
V
CE
= 12.5 V
F
O
= 870 MHz
I
CQ
= 50mA
I
C
= 100 mA
f = 1.0 MHz
P
OUT
= 3.0 W
MINIMUM TYPICAL MAXIMUM
40
16
3.5
1
10
150
10
8.0
50
10.0
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
