MRF951
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The
ASI
MRF951
is Designed for high
gain. Low noise small-signal amplifiers.
Applications up to 2.0 GHz.
PACKAGE STYLE
Dim. Are in mm
FEATURES:
•
Low Noise Figure
•
High Gain
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
100 mA
20 V
10 V
1.5 V
1.0 W @ T
C
= 25 °C
-65 °C to +150 °C
-65 °C to +150 °C
100 °C/W
Leads 1 and 3 = Emitter
2 = Collector
4 = Base
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE
C
cb
G
NF
NF
50Ω
Ω
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 0.1 mA
I
C
= 0.1 mA
V
CB
= 10 V
V
EB
= 1.0 V
V
CE
= 6.0 V
V
CB
= 10 V
V
CE
= 6.0 V
V
CE
= 6.0 V
I
C
= 5.0 mA
I
C
= 5.0 mA
I
C
= 5.0 mA
f = 1.0 MHz
f = 1.0 GHz
f = 2.0 GHz
f = 1.0 GHz
MINIMUM TYPICAL MAXIMUM
20
10
0.1
0.1
50
0.45
14
9.0
1.9
2.8
200
UNITS
V
V
µA
µA
---
pF
dB
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
