MSC1150M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MSC1150M
is Designed for
Class C, DME/TACAN Applications
up to 1150 MHz.
PACKAGE STYLE .400 2NL FLG
A
.0 2 5 x 4 5 °
2X B
C
F
ØD
E
4 x .0 6 2 x 4 5 °
FEATURES:
•
Internal Input/Output Matching Networks
•
P
G
= 7.8 dB at 150 W/1150 MHz
•
Omnigold™
Metalization System
G
H
I
J
K
P
M
D IM
A
M IN IM U M
inches / m m
L
N
M A X IM U M
inches / m m
.0 2 0 / 0 .5 1
.1 0 0 / 2 .5 4
.3 7 6 / 9 .5 5
.1 1 0 / 2 .7 9
.3 9 5 / 1 0 .0 3
.1 9 3 / 4 .9 0
.4 5 0 / 1 1 .4 3
.1 2 5 / 3 .1 8
.6 4 0 / 1 6 .2 6
.8 9 0 / 2 2 .6 1
.3 9 5 / 1 0 .0 3
.0 0 4 / 0 .1 0
.0 5 2 / 1 .3 2
.1 1 8 / 3 .0 0
.0 3 0 / 0 .7 6
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
11 A
55 V
400 W @ T
C
= 25 °C
-65 °C to +250 °C
-65 °C to +200 °C
0.3 °C/W
B
C
D
E
F
G
H
I
J
K
L
M
N
P
.3 9 6 / 1 0 .0 6
.1 3 0 / 3 .3 0
.4 0 7 / 1 0 .3 4
.6 6 0 / 1 6 .7 6
.9 1 0 / 2 3 .1 1
.4 1 5 / 1 0 .5 4
.0 0 7 / 0 .1 8
.0 7 2 / 1 .8 3
.1 3 1 / 3 .3 3
.2 3 0 / 5 .8 4
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CES
h
FE
C
ob
P
G
η
C
I
C
= 10 mA
I
C
= 15 mA
I
E
= 1.0 mA
V
CE
= 50 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CC
= 50 V
T
C
= 25 °C
NONETEST
CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
65
65
3.5
12.5
UNITS
V
V
V
mA
---
pF
dB
%
I
C
= 1.0 A
f = 1.0 MHz
P
OUT
= 150 W
f = 1025 - 1150 MHz
15
120
80
7.8
40
8.3
42
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
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