MSC3000
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MSC3000
is Designed for
general purpose Amplifier Applications
up to 3500 MHz.
PACKAGE STYLE .250 2L FLG (B)
A
1
ØD
.100 X 45°
.088 x 45°
CHAMFER
C
3
FEATURES:
•
P
OUT
= 5.0 W Typ. at 3 GHz
•
Common Base
Configuration
•
Omnigold™
Metellization System
B
2
E
F
G
H
J
K
I
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
100 mA
30 V
2.5 W @ T
C
≤
85 °C
-65 °C to +200 °C
-65 °C to +200 °C
45 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
MINIMUM
inches / mm
MAXIMUM
inches / mm
.095 / 2.41
1.050 / 26.67
.245 / 6.22
.120 / 3.05
.552 / 14.02
.790 / 20.07
.105 / 2.67
.255 / 6.48
.140 / 3.56
.572 / 14.53
.810 / 20.57
.285 / 7.24
.003 / 0.08
.052 / 1.32
.120 / 3.05
.007 / 0.18
.072 / 1.83
.130 / 3.30
.210 / 5.33
1 = COLLECTOR
2 = BASE
3 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CER
BV
CBO
BV
EBO
I
CBO
h
FE
C
OB
P
G
η
C
I
C
= 5.0 mA
I
C
= 1.0 mA
I
E
= 1.0 mA
V
CB
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CC
= 28 V
T
C
= 25 °C
NONE
TEST CONDITIONS
R
BE
= 10Ω
MINIMUM TYPICAL MAXIMUM
50
50
3.5
250
UNITS
V
V
V
µA
---
pF
dB
%
I
C
= 500 mA
f = 1.0 MHz
P
OUT
= 0.5 W
f = 3.0 GHz
20
120
2.5
7.0
25
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
