HIGH POWER GaAs FET
FEATURES INCLUDE:
•
27.5 dBm Output Power with 7db
Associated Gain at 8 GHz
Power Optimized Design Provides
High Power-added Efficiency
Large Cross Section Ti/Pt/Au
Gates Enhance Durability and
Reliability
Chip Devices are Selected from
Standard Military Grade Wafers
Hermetic Metal/Ceramic Package
Suitable for Hi-Rel Applications
Custom Electrical Test and
Screening Available for Source
Control Drawings
•
•
FET PACKAGE TYPE 30
•
•
•
TRANS1.SYM
RF ELECTRICAL SPECIFICATIONS
SYMBOL
MAG
PMAG
FREQUENCY
MAX AVAILABLE GAIN
T
A
= 25 C
O
TEST CONDITIONS
= 8.0 GHz
MINIMUM TYPICAL MAXIMUM
8.5
24
UNITS
dB
dBm
OUTPUT POWER AT MAG TUNING
FREQUENCY
= 8.0 GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
