MSC80917
NPN SILICON RF MICROWAVE TRANSISTOR
DESCRIPTION:
The
ASI MSC80917
is low level
Class-C, Common Base Device
Designed for IFF, DME driver
Applications.
PACKAGE STYLE .280 2L FL (B)
2
3
1
FEATURES INCLUDE:
•
Omnigold™
Metalization System
•
P
OUT
4.0 W Min.
•
G
P
= 10 dB
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
θ
JC
1.0 A
37 V
7.5 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
35 °C/W
1 = COLLECTOR
2 = BASE
3 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CES
h
FE
G
P
P
OUT
η
T
C
= 25 °C
TEST CONDITIONS
I
C
= 1.0 mA
I
C
= 5.0 mA
I
E
= 1.0 mA
V
CE
= 35 V
V
CE
= 5.0 V
V
CE
= 35 V
I
C
= 100 mA
f = 1025 to 1150 MHz
DUTY CYCLE
= 1.0%
MINIMUM TYPICAL MAXIMUM
45
20
3.5
1.0
20
10
4.0
35
120
UNITS
V
V
V
mA
P
IN
= 400 mW
PULSE WIDTH
= 10
µS
dB
W
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
