MSC81035M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MSC81035M
is a common
base device, medium power Class C
transistor for pulsed
L-Band avionics, DME/TACAN
Applications.
PACKAGE STYLE .250 2L FLG (B)
A
.100 X 45°
ØD
.088 x 45°
CHAMFER
C
B
FEATURES:
F
E
G
H
J
K
•
Input matching
•
Emitter site Ballasted.
•
P
G
= 10 dB at 35 W/1150 MHz
•
Omnigold™
Metalization System
I
DIM
A
B
MINIMUM
inches / mm
MAXIMUM
inches / mm
.095 / 2.41
1.050 / 26.67
.245 / 6.22
.120 / 3.05
.552 / 14.02
.790 / 20.07
.105 / 2.67
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
3.0 A
55 V
150 W @ T
C
≤
100 °C
-65 °C to +250 °C
-65 °C to +150 °C
1.0 ° C/W
O
C
D
E
F
G
H
I
J
K
.255 / 6.48
.140 / 3.56
.572 / 14.53
.810 / 20.57
.285 / 7.24
.003 / 0.08
.052 / 1.32
.120 / 3.05
.007 / 0.18
.072 / 1.83
.130 / 3.30
.210 / 5.33
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CES
h
FE
P
G
η
C
I
C
= 10 mA
I
C
= 10 mA
I
E
= 1.0 mA
V
CE
= 50 V
V
CE
= 5.0 V
T
C
= 25 °C
NONETEST
CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
65
65
3.5
5.0
UNITS
V
V
V
mA
---
dB
%
I
C
= 500 mA
P
OUT
= 35 W
f = 1025-1150 MHz
15
10.7
43
11.2
48
120
V
CC
= 50 V
P
IN
= 3.0 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
